tm april 2012 fdms2672 n-channel ultrafet trench mosfet ?2012 fairchild semiconductor corporation fdms26 72 rev.c 1 www.fairchildsemi.com 1 fdms2672 n-channel ultrafet trench mosfet 200v, 20a, 77m features max r ds(on) = 77m at v gs = 10v, i d = 3.7a max r ds(on) = 88m at v gs = 6v, i d = 3.5a low miller charge rohs compliant general description uitrafet devices combine characteristics that enable benchmark efficiency in power conversion applications. optimized for r ds(on) , low esr, low total and miller gate charge, these devices are ideal for high frequency dc to dc converters. application dc - dc conversion mosfet maximum ratings t a = 25c unless otherwise noted thermal characteristics package marking an d ordering information symbol parameter ratings units v ds drain to source voltage 200 v v gs gate to source voltage 20 v i d drain current -continuous (silicon limited) t c = 25c 20 a -continuous t a = 25c (note 1a) 3.7 -pulsed 20 p d power dissipation t c = 25c 78 w power dissipation t a = 25c (note 1a) 2.5 t j , t stg operating and storage junction temperature range -55 to +150 c r jc thermal resistance, junction to case 1.6 c/w r ja thermal resistance, junction to ambient (note 1a) 50 device marking device package reel size tape width quantity fdms2672 fdms2672 power 56 13 12mm 3000 units g s s s pin 1 power 56 (bottom view) d d d d 4 3 2 1 5 6 7 8 g s s s d d d d e as single pulse avalanche energy (note 3) 33.8 mj
fdms2672 n-channel ultrafet trench mosfet fdms2672 rev.c1 www.fairchildsemi.com 2 electrical characteristics t j = 25c unless otherwise noted symbol parameter test conditions min typ max units off characteristics bv dss drain to source breakdown voltage i d = 250 a, v gs = 0v 200 v bv dss t j breakdown voltage temperature coefficient i d = 250 a, referenced to 25c 210 mv/c i dss zero gate voltage drain current v ds = 160v 1 a i gss gate to source leakage current v gs = 20v, v ds = 0v 100 na on characteristics v gs(th) gate to source threshold voltage v gs = v ds , i d = 250 a 2 3.1 4 v v gs(th) t j gate to source threshold voltage temperature coefficient i d = 250 a, referenced to 25c -10 mv/c r ds(on) drain to source on resistance v gs = 10v, i d = 3.7a 64 77 m v gs = 6v, i d = 3.5a 69 88 v gs = 10v, i d = 3.7a t j = 125c 129 156 g fs forward transconductance v ds = 10v, i d = 3.7a 14 s dynamic characteristics c iss input capacitance v ds = 100v, v gs = 0v, f = 1mhz 1740 2315 pf c oss output capacitance 95 125 pf c rss reverse transfer capacitance 30 45 pf r g gate resistance 1 switching characteristics t d(on) turn-on delay time v dd = 100v, i d = 3.7a v gs = 10v, r gen = 6 22 34 ns t r rise time 11 22 ns t d(off) turn-off delay time 36 57 ns t f fall time 10 20 ns q g(tot) total gate charge at 10v v gs = 0v to 10v v dd = 100v i d = 3.7a 30 42 nc q gs gate to source gate charge 7 nc q gd gate to drain miller charge 8 nc drain-source diode characteristics v sd source to drain diode forward voltage v gs = 0v, i s = 3.7a (note 2) 0.8 1.2 v t rr reverse recovery time i f = 3.7a, di/dt = 100a/ s 70 105 ns q rr reverse recovery charge 238 357 nc notes: 1: r ja is determined with the device mounted on a 1in 2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of fr-4 material. r jc is guaranteed by design while r ca is determined by the user's board design. 2: pulse test: pulse width < 300 s, duty cycle < 2.0%. a. 50c/w when mounted on a 1 in 2 pad of 2 oz copper b. 125c/w when mounted on a minimum pad of 2 oz copper 0.1 5 3: e as of 33.8mj is based on starting t j = 25 c, l = 3mh, i as = 4.75a, v dd = 25v, v gs = 10v.
fdms2672 n-channel ultrafet trench mosfet fdms2672 rev.c1 www.fairchildsemi.com 3 typical characteristics t j = 25c unless otherwise noted figure 1. 01234 0 10 20 30 40 v gs = 8v pulse duration = 80 s duty cycle = 0.5%max v gs = 6v v gs = 5v v gs = 10v i d , drain current (a) v ds , drain to source voltage (v) on region characteristics figure 2. 0 10203040 0.5 1.0 1.5 2.0 2.5 3.0 pulse duration = 80 s duty cycle = 0.5%max normalized drain to source on-resistance i d , drain current(a) v gs = 8v v gs = 6v v gs = 5v v gs = 10v n o r m a l i z e d o n - r e s i s t a n c e vs drain current and gate voltage f i g u r e 3 . n o r m a l i z e d o n r e s i s t a n c e -75 -50 -25 0 25 50 75 100 125 150 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 i d = 3.7a v gs = 10v normalized drain to source on-resistance t j , junction temperature ( o c ) vs junction temperature figure 4. 45678910 50 75 100 125 150 175 200 t a = 25 o c t a = 150 o c i d = 4.5a pulse duration = 80 s duty cycle = 0.5%max r ds(on) , drain to source on-resistance ( m ) v gs , gate to source voltage (v) o n - r e s i s t a n c e v s g a t e t o source voltage figure 5. transfer characteristics 234567 0 5 10 15 20 25 pulse duration = 80 s duty cycle = 0.5%max t j = -55 o c t j = 25 o c t j = 150 o c i d , drain current (a) v gs , gate to source voltage (v) figure 6. 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1e-3 0.01 0.1 1 10 t j = -55 o c t j = 25 o c t j = 150 o c v gs = 0v i s , reverse drain current (a) v sd , body diode forward voltage (v) 40 s o u r c e t o d r a i n d i o d e forward voltage vs source current
fdms2672 n-channel ultrafet trench mosfet fdms2672 rev.c1 www.fairchildsemi.com 4 figure 7. 0 10203040 0 2 4 6 8 10 v dd = 150v v dd = 50v v gs , gate to source voltage(v) q g , gate charge(nc) v dd = 100v gate charge characteristics figure 8. 0.1 1 10 100 10 100 1000 f = 1mhz v gs = 0v capacitance (pf) v ds , drain to source voltage (v) c rss c oss c iss 4000 c a p a c i t a n c e v s d r a i n to source voltage figure 9. 0.01 0.1 1 10 1 2 3 4 5 t j = 25 o c t j = 125 o c t av , time in avalanche(ms) i as , avalanche current(a) u n c l a m p e d i n d u c t i v e switching capability figure 10. 25 50 75 100 125 150 0 5 10 15 20 25 r jc = 1.6 o c/w v gs = 6v v gs = 10v i d , drain current (a) t c , case temperature ( o c ) m a x i m u m c o n t i n u o u s d r a i n current vs case temperature f i g u r e 1 1 . f o r w a r d b i a s s a f e operating area 0.1 1 10 100 1e-3 0.01 0.1 1 10 100us 1ms 10ms 100ms 1s dc i d , drain current (a) v ds , drain to source voltage (v) 60 operation in this area may be limited by r ds(on) single pulse t j = max rated t a = 25 o c 700 figure 12. 10 -3 10 -2 10 -1 10 0 10 1 10 2 10 3 1 10 100 1000 0.3 v gs = 10v single pulse p ( pk ) , peak transient power (w) t, pulse width (s) 2000 t a = 25 o c i = i 25 for temperatures above 25 o c derate peak current as follows: 150 t a C 125 ---------------------- - s i n g l e p u l s e m a x i m u m power dissipation typical characteristics t j = 25c unless otherwise noted
fdms2672 n-channel ultrafet trench mosfet fdms2672 rev.c1 www.fairchildsemi.com 5 figure 13. transient thermal response curve 10 -3 10 -2 10 -1 10 0 10 1 10 2 10 3 1e-3 0.01 0.1 1 5e-4 duty cycle-descending order normalized thermal impedance, z ja t, rectangular pulse duration (s) d = 0.5 0.2 0.1 0.05 0.02 0.01 single pulse 2 p dm t 1 t 2 notes: duty factor: d = t 1 /t 2 peak t j = p dm x z ja x r ja + t a typical characteristics t j = 25c unless otherwise noted
fdms2672 n-channel ultrafet trench mosfet fdms2672 rev.c1 www.fairchildsemi.com 6
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